Fabrication and characterization of Teflon-bonded periodic GaAs structures for THz generation.
نویسندگان
چکیده
A novel technique for low-temperature bonding of GaAs wafers using an interboundary Teflon film is developed. A fabricated stack of ten 25x25 mm2 diced wafers demonstrated 75% transmission of a 10 microm CO2 laser beam. Modeling of these Teflon-bonded (TB) structures as sequences of Fabry-Perot etalons gives a good agreement with transmission measurements. A 20x20 mm2 quasi-phase matched structure of five wafers pumped by CO2 laser lines generated the narrow-band THz radiation at a wavelength of 343 microm via a difference frequency mixing process.
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ورودعنوان ژورنال:
- Optics express
دوره 17 4 شماره
صفحات -
تاریخ انتشار 2009